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Selecting of modes in nano-laser of silicon quantum dots
Wei-Qi Huang;  Shi-Rong Liu;  Chao-Jian Qin;  Quan Lü
2012
发表期刊Optics Communications
卷号285期号:13–14页码:3217-3221
摘要

In a nano-laser of Si quantum dots (QD), the smaller QD fabricated by nanosecond pulse laser can form the pumping level tuned by the quantum confinement (QC) effect. Coupling between the active centers formed by localized states of surface bonds and the two-dimensional (2D) photonic crystal used to select model can produce a sharp peak at 2.076 eV in the nano-laser. It is interesting to make a comparison between the localized electronic states in gap due to defect formed by surface bonds and the localized photonic states in gap of photonic band due to defect of 2D photonic crystal.

关键词Nano-laser si Quantum Dots localized States photonic Crystal
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.gyig.ac.cn/handle/42920512-1/9469
专题矿床地球化学国家重点实验室
作者单位1.Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025, China
2.State Key Laboratory of Ore Deposit Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China
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GB/T 7714
Wei-Qi Huang;Shi-Rong Liu;Chao-Jian Qin;Quan Lü. Selecting of modes in nano-laser of silicon quantum dots[J]. Optics Communications,2012,285(13–14):3217-3221.
APA Wei-Qi Huang;Shi-Rong Liu;Chao-Jian Qin;Quan Lü.(2012).Selecting of modes in nano-laser of silicon quantum dots.Optics Communications,285(13–14),3217-3221.
MLA Wei-Qi Huang;Shi-Rong Liu;Chao-Jian Qin;Quan Lü."Selecting of modes in nano-laser of silicon quantum dots".Optics Communications 285.13–14(2012):3217-3221.
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